Kyndiah A; Ablat A; Guyot-Reeb S; Schultz TAUID- ORCID: 0000-0002-0344-6302; Zu F; Koch NAUID- ORCID: 0000-0002-6042-6447; Amsalem P; Chiodini S; Yilmaz Alic T; Topal Y; Kus M; Hirsch L; Fasquel S; Abbas MAUID- ORCID: 0000-0003-0222-5994
(2018)
Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In(2)O(3) thin film transistors, which results in overall improvement of ...